GeneSiC’s Industry Leading 6.5kV SiC MOSFETs - The Vanguard for a New Wave of Applications
GeneSiC releases 6.5kV silicon carbide MOSFETs to lead the forefront in delivering unprecedented levels of performance, efficiency and reliability in medium-voltage power conversion applications such as traction, pulsed power and smart grid infrastructure. - October 23, 2020
Gate Driver Board and SPICE Models for Silicon Carbide Junction Transistors (SJT) Released
Gate Driver Board optimized for high switching speeds and behavior-based models enable power electronic design engineers to verify and quantify benefits of SJTs in board-level evaluation and circuit simulation. - November 21, 2014
GeneSiC Releases 25 mOhm/1700 V Silicon Carbide Transistors
SiC switches offering lowest conduction losses and superior short circuit capability released for High Frequency Power Circuits - October 29, 2014
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